GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials - Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India) - Bøger - Elsevier Science Publishing Co Inc - 9780323998710 - 22. maj 2024
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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials

Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India)

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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials

425 pages, 200 illustrations (150 in full color); Illustrations, unspecified

Medie Bøger     Paperback Bog   (Bog med blødt omslag og limet ryg)
Udgivet 22. maj 2024
ISBN13 9780323998710
Forlag Elsevier Science Publishing Co Inc
Antal sider 260
Mål 230 × 152 × 18 mm   ·   426 g
Sprog Engelsk  
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