The Silicon Carbide Mos Capacitor: a Study of Defects, Generation Lifetimes, Leakagecurrents, and Other Interesting Nonidealities in Thenon-equilibrium Sic / Sio2 Mos Capacitor

Only a few years after the invention of thetransistor, William Shockley declared silicon carbide(SiC) an excellent material for high temperaturesemiconductor devices. In fact, he predicted that itwould be the most important electronic material to follow silicon. Furthermore, since SiC has the ability to grow thermal silicon dioxide, this would seem to be the ideal material for a high temperature metal oxide semiconductor field effect transistor (MOSFET). However, over a half century later, SiC technology has yet to attain widespread use in commercial electronic devices. This is due to number of significant hurdles; mainly the relatively high cost and difficulty of creating high quality SiC materials and its thermal SiO2 films. In this work, quality of the SiC/SiO2 system is studied using a simple structure, the metal oxide semiconductor (MOS)capacitor. Well developed methods, such as the pulsedMOS capacitor technique, are applied extensively tothis device. This work is particularly valuable forgraduate students, professors, electrical engineers,and scientists working to make the SiC MOSFET a reality.