Device Physics of Hydrogenated Amorphous Siliconsolar Cells: Metastability of A-si:h Solar Cells

This paper discusses the device physics ofas-deposited and light-soaked hydrogenated amorphoussilicon solar cells. The staebler-Wronski effect isthe key issue in this paper. The metastability ofa-Si: H solar cell is explained by a modified hydrogencollision model to explain the degradation of a-Si: Hafter some time light soaking. The key parameters arestudied by experiments as well as computersimulation, both reach the agreement for our theory. Valence band tail model is used for our theory andsimulation. For light soaked state, a defect is usedfor modeling.